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Semiconductors Transistors

2SK2640

2SK2640
Quantity excl. VAT VAT incl.
1 - 1 9.88$ 9.88$
2 - 2 9.39$ 9.39$
3 - 4 8.90$ 8.90$
5 - 9 8.40$ 8.40$
10 - 19 8.20$ 8.20$
20 - 29 8.01$ 8.01$
30+ 7.71$ 7.71$
Quantity U.P
1 - 1 9.88$ 9.88$
2 - 2 9.39$ 9.39$
3 - 4 8.90$ 8.90$
5 - 9 8.40$ 8.40$
10 - 19 8.20$ 8.20$
20 - 29 8.01$ 8.01$
30+ 7.71$ 7.71$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

2SK2640. C(in): 950pF. Cost): 180pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Function: High Speed ​​Switching. Id(imp): 40A. ID (T=100°C): 10A. ID (T=25°C): 10A. Idss (max): 200uA. IDss (min): 10uA. Marking on the case: K2640. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.73 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 25 ns. Technology: FAP-IIS Series MOS-FET. Housing: TO-220FP. Housing (according to data sheet): TO-220F15. Operating temperature: -55...+150°C. Voltage Vds(max): 500V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3.5V. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 06/01/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
STF11NM60ND

STF11NM60ND

C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Ty...
STF11NM60ND
C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
STF11NM60ND
C(in): 850pF. Cost): 44pF. Channel type: N. Conditioning: plastic tube. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Function: LOW INPUT CAPACITANCE, RESISTANCE AND GATE CHARGE. Id(imp): 40A. ID (T=100°C): 6.3A. ID (T=25°C): 10A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 11NM60ND. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.37 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 50 ns. Td(on): 16 ns. Technology: MDmesh II POWER MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: HIGH dv/dt AND AVALANCHE CAPABILITIES. Drain-source protection : yes. G-S Protection: no
Set of 1
4.63$ VAT incl.
(4.63$ excl. VAT)
4.63$

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MDF11N60TH

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FAN7530M

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IRFP140

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C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type o...
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FDPF7N50U

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RSF1WS-0R15

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