Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.61$ | 10.61$ |
2 - 2 | 10.08$ | 10.08$ |
3 - 4 | 9.55$ | 9.55$ |
5 - 9 | 9.02$ | 9.02$ |
10 - 19 | 8.81$ | 8.81$ |
20 - 29 | 8.59$ | 8.59$ |
30 - 56 | 8.28$ | 8.28$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.61$ | 10.61$ |
2 - 2 | 10.08$ | 10.08$ |
3 - 4 | 9.55$ | 9.55$ |
5 - 9 | 9.02$ | 9.02$ |
10 - 19 | 8.81$ | 8.81$ |
20 - 29 | 8.59$ | 8.59$ |
30 - 56 | 8.28$ | 8.28$ |
2SK1529. C(in): 700pF. Cost): 150pF. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. ID (T=25°C): 10A. Idss (max): 1mA. Marking on the case: K1529. Number of terminals: 3. Pd (Power Dissipation, Max): 120W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon N-Channel MOS Type. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): 2-16C1B. Operating temperature: -55...+150°C. Voltage Vds(max): 180V. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Spec info: complementary transistor (pair) 2SJ200. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 04/01/2025, 10:25.
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