Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.34$ | 2.34$ |
5 - 9 | 2.22$ | 2.22$ |
10 - 24 | 2.11$ | 2.11$ |
25 - 49 | 1.99$ | 1.99$ |
50 - 99 | 1.71$ | 1.71$ |
100 - 107 | 1.67$ | 1.67$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.34$ | 2.34$ |
5 - 9 | 2.22$ | 2.22$ |
10 - 24 | 2.11$ | 2.11$ |
25 - 49 | 1.99$ | 1.99$ |
50 - 99 | 1.71$ | 1.71$ |
100 - 107 | 1.67$ | 1.67$ |
2SD2396. Cost): 55pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Collector current: 3A. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 60V. Vebo: 6V. BE diode: no. CE diode: no. Quantity in stock updated on 26/12/2024, 03:25.
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