Quantity | excl. VAT | VAT incl. |
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1 - 3 | 1.01$ | 1.01$ |
Quantity | U.P | |
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1 - 3 | 1.01$ | 1.01$ |
2SD1996R. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Io-sat DC/DC. Max hFE gain: 350. Minimum hFE gain: 200. Collector current: 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V. Quantity in stock updated on 29/12/2024, 19:25.
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