2SD1804

2SD1804. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 400. Minimum hFE gain: 35. Collector current: 8A. Ic(pulse): 12A. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Silicon Transistors'. Tf(max): 20 ns. Tf(min): 20 ns. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Function: High-Current Switching, low-saturation voltage. Spec info: complementary transistor (pair) 2SB1204. Quantity in stock updated on 29/12/2024, 19:25.