Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 1.00$ | 1.00$ |
25 - 49 | 0.94$ | 0.94$ |
50 - 99 | 0.92$ | 0.92$ |
100 - 249 | 0.79$ | 0.79$ |
250 - 923 | 0.75$ | 0.75$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.11$ | 1.11$ |
5 - 9 | 1.05$ | 1.05$ |
10 - 24 | 1.00$ | 1.00$ |
25 - 49 | 0.94$ | 0.94$ |
50 - 99 | 0.92$ | 0.92$ |
100 - 249 | 0.79$ | 0.79$ |
250 - 923 | 0.75$ | 0.75$ |
2SC5707. Conditioning: plastic tube. Conditioning unit: 100dB. Quantity per case: 1. Semiconductor material: silicon. FT: 330 MHz. Function: DC-DC converter, TFT power supply. Max hFE gain: 560. Minimum hFE gain: 200. Collector current: 8A. Ic(pulse): 11A. Marking on the case: C5707. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 15W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 25 ns. Tf(min): 25 ns. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.11V. Collector/emitter voltage Vceo: 80V. Spec info: complementary transistor (pair) 2SA2040. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 19:25.
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