Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.26$ | 3.26$ |
5 - 9 | 3.10$ | 3.10$ |
10 - 24 | 2.93$ | 2.93$ |
25 - 49 | 2.77$ | 2.77$ |
50 - 97 | 2.58$ | 2.58$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.26$ | 3.26$ |
5 - 9 | 3.10$ | 3.10$ |
10 - 24 | 2.93$ | 2.93$ |
25 - 49 | 2.77$ | 2.77$ |
50 - 97 | 2.58$ | 2.58$ |
2SC5198-TOS. Cost): 170pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 10A. Marking on the case: C5198 O. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): 2-16C1B. Type of transistor: NPN. Vcbo: 140V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 140V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1941. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 06:25.
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