2SB1470

2SB1470. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: Optimum for 120W Hi-Fi output. Max hFE gain: 20000. Minimum hFE gain: 3500. Collector current: 8A. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple diffusion planar type darlington'. Tf(max): 1.2us. Tf(min): 1.2us. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TOP-3L. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 160V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 05:25.