Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.72$ | 1.72$ |
5 - 9 | 1.63$ | 1.63$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.72$ | 1.72$ |
5 - 9 | 1.63$ | 1.63$ |
2SB1185. Cost): 50pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-E-L. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial planar type'. Housing: TO-220FP. Housing (according to data sheet): SC-67. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 06:25.
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