2SB1132

Quantity	excl. VAT	VAT incl.
1 - 4	0.89$	0.89$
5 - 9	0.84$	0.84$
10 - 24	0.80$	0.80$
25 - 49	0.76$	0.76$
50 - 89	0.74$	0.74$

Quantity	U.P
1 - 4	0.89$	0.89$
5 - 9	0.84$	0.84$
10 - 24	0.80$	0.80$
25 - 49	0.76$	0.76$
50 - 89	0.74$	0.74$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 89

Set of 1

2SB1132. Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Collector current: 1A. Marking on the case: BA. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT-89 (SC-62). Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 32V. Vebo: 5V. Spec info: SMD BA0. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 06:25.

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Delivery in 2-3 days, with postal tracking!