Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.51$ | 1.51$ |
5 - 9 | 1.43$ | 1.43$ |
10 - 24 | 1.36$ | 1.36$ |
25 - 49 | 1.28$ | 1.28$ |
50 - 68 | 1.15$ | 1.15$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.51$ | 1.51$ |
5 - 9 | 1.43$ | 1.43$ |
10 - 24 | 1.36$ | 1.36$ |
25 - 49 | 1.28$ | 1.28$ |
50 - 68 | 1.15$ | 1.15$ |
2SA1360. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Max hFE gain: 240. Minimum hFE gain: 80. Collector current: 0.05A. Pd (Power Dissipation, Max): 5W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): 2-8H1A. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3423. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 27/12/2024, 05:25.
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