2SA1358Y

Quantity	excl. VAT	VAT incl.
1 - 4	1.70$	1.70$
5 - 9	1.61$	1.61$
10 - 24	1.53$	1.53$
25 - 49	1.44$	1.44$
50 - 69	1.30$	1.30$

Quantity	U.P
1 - 4	1.70$	1.70$
5 - 9	1.61$	1.61$
10 - 24	1.53$	1.53$
25 - 49	1.44$	1.44$
50 - 69	1.30$	1.30$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 69

Set of 1

2SA1358Y. Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 10W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-126F. Housing (according to data sheet): TO-126F (2-8A1H). Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC3421Y. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 03:25.

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Delivery in 2-3 days, with postal tracking!