Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 1.55$ | 1.55$ |
2 - 2 | 1.48$ | 1.48$ |
3 - 4 | 1.40$ | 1.40$ |
5 - 9 | 1.32$ | 1.32$ |
10 - 24 | 1.24$ | 1.24$ |
25 - 49 | 1.04$ | 1.04$ |
50 - 910 | 0.97$ | 0.97$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 1.55$ | 1.55$ |
2 - 2 | 1.48$ | 1.48$ |
3 - 4 | 1.40$ | 1.40$ |
5 - 9 | 1.32$ | 1.32$ |
10 - 24 | 1.24$ | 1.24$ |
25 - 49 | 1.04$ | 1.04$ |
50 - 910 | 0.97$ | 0.97$ |
2SA1015Y. Cost): 4pF. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE.120-240. Max hFE gain: 240. Minimum hFE gain: 120. Collector current: 0.15A. Marking on the case: 1015 Y. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.4W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -...+125°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: complementary transistor (pair) 2SC1815Y. BE diode: no. CE diode: no. Quantity in stock updated on 09/04/2025, 11:25.
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