2N6517

Quantity	excl. VAT	VAT incl.
1 - 9	0.29$	0.29$
10 - 24	0.27$	0.27$
25 - 49	0.26$	0.26$
50 - 99	0.24$	0.24$
100 - 249	0.23$	0.23$
250 - 355	0.20$	0.20$

Quantity	U.P
1 - 9	0.29$	0.29$
10 - 24	0.27$	0.27$
25 - 49	0.26$	0.26$
50 - 99	0.24$	0.24$
100 - 249	0.23$	0.23$
250 - 355	0.20$	0.20$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 355

Set of 1

2N6517. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 40MHz (min), 200MHz (max). Max hFE gain: 200. Minimum hFE gain: 20. Collector current: 0.5A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: NPN Epitaxial Silicon Transistor. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 350V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 350V. Vebo: 6V. Spec info: complementary transistor (pair) 2N6520. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!