Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.88$ | 1.88$ |
5 - 9 | 1.79$ | 1.79$ |
10 - 24 | 1.69$ | 1.69$ |
25 - 49 | 1.60$ | 1.60$ |
50 - 93 | 1.83$ | 1.83$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.88$ | 1.88$ |
5 - 9 | 1.79$ | 1.79$ |
10 - 24 | 1.69$ | 1.69$ |
25 - 49 | 1.60$ | 1.60$ |
50 - 93 | 1.83$ | 1.83$ |
2N2369A. Resistor B: yes. BE diode: NPN transistor. BE resistor: PCB soldering. C(in): TO-18. Cost): TO-18. CE diode: PCB through-hole mounting. Quantity per case: 1. Semiconductor material: silicon. FT: 500 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.2A. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.36W. Assembly/installation: PCB through-hole mounting. Tf(max): 15 ns. Tf(min): 15 ns. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Operating temperature: -60...+200°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 40V. Quantity in stock updated on 23/12/2024, 15:25.
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