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Semiconductors Diodes Diode rectifier bridges

W06M

W06M
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.32$ 0.32$
10 - 24 0.30$ 0.30$
25 - 49 0.29$ 0.29$
50 - 99 0.27$ 0.27$
100 - 249 0.25$ 0.25$
250 - 499 0.21$ 0.21$
500 - 1356 0.20$ 0.20$
Quantity U.P
1 - 9 0.32$ 0.32$
10 - 24 0.30$ 0.30$
25 - 49 0.29$ 0.29$
50 - 99 0.27$ 0.27$
100 - 249 0.25$ 0.25$
250 - 499 0.21$ 0.21$
500 - 1356 0.20$ 0.20$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1356
Set of 1

W06M. Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. Forward current (AV): 1.5A. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 600V. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS). Quantity in stock updated on 24/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 398
W10M

W10M

Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon....
W10M
Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. Forward current (AV): 1.5A. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS)
W10M
Cj: 24pF. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. Forward current (AV): 1.5A. IFSM: 50A. Note: diameter 10mm. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 4. Pitch: 5.6x5.6mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: Ifsm--50Ap, (50-60Hz, t=8.3mS)
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$
Quantity in stock : 185
B800C1500R

B800C1500R

Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS...
B800C1500R
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. Forward current (AV): 1.5A. IFSM: 50A. Dimensions of connections: distance between legs 5.6x5.6mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55°C...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 800V. Quantity per case: 4. Number of terminals: 4. Note: diameter 10mm. Spec info: IFSM--50A (50-60Hz, t=8.3mS)
B800C1500R
Dielectric structure: Diode bridge. Semiconductor material: silicon. Function: Single Phase 1.5 AMPS. Forward current (AV): 1.5A. IFSM: 50A. Dimensions of connections: distance between legs 5.6x5.6mm. Assembly/installation: PCB through-hole mounting. Operating temperature: -55°C...+125°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 800V. Quantity per case: 4. Number of terminals: 4. Note: diameter 10mm. Spec info: IFSM--50A (50-60Hz, t=8.3mS)
Set of 1
0.30$ VAT incl.
(0.30$ excl. VAT)
0.30$

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