Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 100A. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO214AB ( 5.2x3.6mm ). Tolerance: 5%. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 5V. Forward voltage Vf (min): 3.5V. VRRM: 36V. Number of terminals: 2. Quantity per case: 1. Spec info: Ppk--600W t=1ms, IFSM--100Ap t=8.3ms