Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Function: protection against overvoltage. IFSM: 102A. Pd (Power Dissipation, Max): 8W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): SMC DO218AB 13.5x10mm. Tolerance: 5%. Operating temperature: -55...+175°C. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM 700Ap/8.3ms 6600W, T=10/1000us