STW28N65M2
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 5.79$ | 5.79$ |
| 2 - 2 | 5.50$ | 5.50$ |
| 3 - 4 | 5.21$ | 5.21$ |
| 5 - 9 | 4.93$ | 4.93$ |
| 10 - 19 | 4.81$ | 4.81$ |
| 20 - 29 | 4.69$ | 4.69$ |
| 30 - 44 | 4.52$ | 4.52$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 5.79$ | 5.79$ |
| 2 - 2 | 5.50$ | 5.50$ |
| 3 - 4 | 5.21$ | 5.21$ |
| 5 - 9 | 4.93$ | 4.93$ |
| 10 - 19 | 4.81$ | 4.81$ |
| 20 - 29 | 4.69$ | 4.69$ |
| 30 - 44 | 4.52$ | 4.52$ |
STW28N65M2. C(in): 1440pF. Cost): 60pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 384 ns. Function: switching circuits. Id(imp): 80A. ID (T=100°C): 13A. ID (T=25°C): 20A. Idss (max): 100uA. IDss (min): 1uA. Marking on the case: 28N65M2. Pd (Power Dissipation, Max): 170W. On-resistance Rds On: 0.15 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 59 ns. Td(on): 13.4 ns. Technology: MDmesh™ M2 Power MOSFETs. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 650V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.
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