STW12NK80Z

Quantity	excl. VAT	VAT incl.
1 - 4	5.12$	5.12$
5 - 9	4.86$	4.86$
10 - 24	4.61$	4.61$
25 - 29	4.35$	4.35$

Quantity	U.P
1 - 4	5.12$	5.12$
5 - 9	4.86$	4.86$
10 - 24	4.61$	4.61$
25 - 29	4.35$	4.35$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 29

Set of 1

STW12NK80Z. C(in): 2620pF. Cost): 250pF. Channel type: N. Trr Diode (Min.): 635 ns. Type of transistor: MOSFET. Function: Improved ESD capability. Id(imp): 42A. ID (T=100°C): 6.6A. ID (T=25°C): 10.5A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: W12NK80Z. Pd (Power Dissipation, Max): 190W. On-resistance Rds On: 0.65 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 70 ns. Td(on): 30 ns. Technology: SuperMESH™ power MOSFET transistor protected by zener diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Voltage Vds(max): 800V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Spec info: 'EXTREMELY HIGH dv/dt CAPABILITY'. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!