STQ1NK60ZR-AP

Quantity	excl. VAT	VAT incl.
1 - 4	0.93$	0.93$
5 - 9	0.89$	0.89$
10 - 24	0.84$	0.84$
25 - 49	0.79$	0.79$
50 - 99	0.77$	0.77$
100 - 249	0.76$	0.76$
250 - 1934	0.65$	0.65$

Quantity	U.P
1 - 4	0.93$	0.93$
5 - 9	0.89$	0.89$
10 - 24	0.84$	0.84$
25 - 49	0.79$	0.79$
50 - 99	0.77$	0.77$
100 - 249	0.76$	0.76$
250 - 1934	0.65$	0.65$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1934

Set of 1

STQ1NK60ZR-AP. C(in): 94pF. Cost): 17.6pF. Channel type: N. Trr Diode (Min.): 135 ns. Type of transistor: MOSFET. Id(imp): 1.2A. ID (T=100°C): 0.189A. ID (T=25°C): 0.3A. Idss (max): 50uA. IDss (min): 1uA. Marking on the case: 1NK60ZR. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 13 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 13 ns. Td(on): 5.5 ns. Technology: SuperMESH™ Power MOSFET. Housing: TO-92. Housing (according to data sheet): TO-92Ammopak. Operating temperature: -50...+150°C. Voltage Vds(max): 600V. Gate/emitter voltage VGE(th) min.: 3V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Quantity per case: 1. Function: Zener-protected, ESD improved capability. Drain-source protection : yes. G-S Protection: yes. Quantity in stock updated on 25/12/2024, 01:25.

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Delivery in 2-3 days, with postal tracking!