STH8NA60FI

Quantity	excl. VAT	VAT incl.
1 - 1	6.72$	6.72$
2 - 2	6.38$	6.38$
3 - 4	6.05$	6.05$
5 - 9	5.71$	5.71$
10 - 13	5.58$	5.58$

Quantity	U.P
1 - 1	6.72$	6.72$
2 - 2	6.38$	6.38$
3 - 4	6.05$	6.05$
5 - 9	5.71$	5.71$
10 - 13	5.58$	5.58$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 13

Set of 1

STH8NA60FI. C(in): 1350pF. Cost): 175pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 600 ns. Type of transistor: MOSFET. Function: fast power MOSFET transistor. Id(imp): 32A. ID (T=100°C): 3.2A. ID (T=25°C): 5A. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: H8NA60FI. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. On-resistance Rds On: 1.5 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 16 ns. Td(on): 20 ns. Technology: 'Enhancement mode'. Housing: ISOWATT218FX. Housing (according to data sheet): ISOWATT218. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 3.75V. Vgs(th) min.: 2.25V. Number of terminals: 3. Quantity per case: 1. Note: Viso 4000V. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!