STF9NM60N
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 3.73$ | 3.73$ |
| 5 - 9 | 3.54$ | 3.54$ |
| 10 - 24 | 3.35$ | 3.35$ |
| 25 - 49 | 3.17$ | 3.17$ |
| 50 - 99 | 3.09$ | 3.09$ |
| 100 - 193 | 3.02$ | 3.02$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 3.73$ | 3.73$ |
| 5 - 9 | 3.54$ | 3.54$ |
| 10 - 24 | 3.35$ | 3.35$ |
| 25 - 49 | 3.17$ | 3.17$ |
| 50 - 99 | 3.09$ | 3.09$ |
| 100 - 193 | 3.02$ | 3.02$ |
STF9NM60N. C(in): 452pF. Cost): 30pF. Channel type: N. Drain-source protection : Zener diode. Trr Diode (Min.): 324 ns. Type of transistor: MOSFET. Function: Low input capacitance and gate charge. Id(imp): 26A. ID (T=100°C): 4A. ID (T=25°C): 6.5A. Idss (max): 100mA. IDss (min): 1mA. Marking on the case: 9NM60N. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. On-resistance Rds On: 0.63 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 52.5 ns. Td(on): 28 ns. Technology: MDmesh™ II Power MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Voltage Vds(max): 600V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Spec info: ID pulse 26A. G-S Protection: no. Quantity in stock updated on 26/12/2024, 01:25.
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