1N4003, DO-41, 1A, 30A, DO-41 ( DO-204AL ), 200V

1N4003, DO-41, 1A, 30A, DO-41 ( DO-204AL ), 200V

Quantity
Unit price
10-19
0.0376$
20-99
0.0289$
100-499
0.0251$
500-999
0.0222$
1000+
0.0186$
+1000 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Equivalence available
Quantity in stock: 4578
Minimum: 10

1N4003, DO-41, 1A, 30A, DO-41 ( DO-204AL ), 200V. Housing: DO-41. Forward current (AV): 1A. IFSM: 30A. Housing (according to data sheet): DO-41 ( DO-204AL ). VRRM: 200V. Assembly/installation: PCB through-hole mounting. Cj: 15pF. Conditioning: Ammo Pack. Conduction voltage (threshold voltage): 1.1V. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 1A. Forward voltage Vf (min): 1.1V. Max reverse voltage: 200V. Number of terminals: 2. Operating temperature: -65...+175°C. Pulse current max.: 30A. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: IFSM--30Ap t=8.3mS. Threshold voltage Vf (max): 1.1V. Threshold voltage: 1.1V. Original product from manufacturer: Lge Technology. Minimum quantity: 10. Quantity in stock updated on 10/31/2025, 06:40

Technical documentation (PDF)
1N4003
26 parameters
Housing
DO-41
Forward current (AV)
1A
IFSM
30A
Housing (according to data sheet)
DO-41 ( DO-204AL )
VRRM
200V
Assembly/installation
PCB through-hole mounting
Cj
15pF
Conditioning
Ammo Pack
Conduction voltage (threshold voltage)
1.1V
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
1A
Forward voltage Vf (min)
1.1V
Max reverse voltage
200V
Number of terminals
2
Operating temperature
-65...+175°C
Pulse current max.
30A
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
IFSM--30Ap t=8.3mS
Threshold voltage Vf (max)
1.1V
Threshold voltage
1.1V
Original product from manufacturer
Lge Technology
Minimum quantity
10

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