10A10, R-6, 10A, 400A, R-6 ( 8.9x8.8mm ), 1000V

10A10, R-6, 10A, 400A, R-6 ( 8.9x8.8mm ), 1000V

Quantity
Unit price
1-4
0.35$
5-24
0.29$
25-49
0.25$
50-99
0.23$
100+
0.19$
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Equivalence available
Quantity in stock: 820

10A10, R-6, 10A, 400A, R-6 ( 8.9x8.8mm ), 1000V. Housing: R-6. Forward current (AV): 10A. IFSM: 400A. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). VRRM: 1000V. Assembly/installation: PCB through-hole mounting. Cj: 120pF. Conduction voltage (threshold voltage): 1.1V. Dielectric structure: Anode-Cathode. Diode type: rectifier diode. Driving current: 10A. Equivalents: P1000M, 10A07-TP. Forward voltage Vf (min): 1V. MRI (max): 100uA. MRI (min): 10uA. Manufacturer's marking: 28.7k Ohms. Marking on the case: 28.7k Ohms. Max reverse voltage: 1kV. Number of terminals: 2. Operating temperature: -55...+150°C. Packaging: Ammo Pack. Pulse current max.: 400A. Quantity per case: 1. RoHS: yes. Semiconductor material: silicon. Semiconductor structure: diode. Spec info: IFSM--400Ap t=8.3ms. Threshold voltage Vf (max): 1V. Trr Diode (Min.): 1500 ns. Original product from manufacturer: Lge Technology. Quantity in stock updated on 10/31/2025, 06:40

10A10
30 parameters
Housing
R-6
Forward current (AV)
10A
IFSM
400A
Housing (according to data sheet)
R-6 ( 8.9x8.8mm )
VRRM
1000V
Assembly/installation
PCB through-hole mounting
Cj
120pF
Conduction voltage (threshold voltage)
1.1V
Dielectric structure
Anode-Cathode
Diode type
rectifier diode
Driving current
10A
Equivalents
P1000M, 10A07-TP
Forward voltage Vf (min)
1V
MRI (max)
100uA
MRI (min)
10uA
Manufacturer's marking
28.7k Ohms
Marking on the case
28.7k Ohms
Max reverse voltage
1kV
Number of terminals
2
Operating temperature
-55...+150°C
Packaging
Ammo Pack
Pulse current max.
400A
Quantity per case
1
RoHS
yes
Semiconductor material
silicon
Semiconductor structure
diode
Spec info
IFSM--400Ap t=8.3ms
Threshold voltage Vf (max)
1V
Trr Diode (Min.)
1500 ns
Original product from manufacturer
Lge Technology

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