SPD09N05

Quantity	excl. VAT	VAT incl.
1 - 4	1.26$	1.26$
5 - 9	1.20$	1.20$
10 - 24	1.13$	1.13$
25 - 49	1.07$	1.07$
50 - 99	1.05$	1.05$
100 - 249	1.02$	1.02$
250 - 455	0.97$	0.97$

Quantity	U.P
1 - 4	1.26$	1.26$
5 - 9	1.20$	1.20$
10 - 24	1.13$	1.13$
25 - 49	1.07$	1.07$
50 - 99	1.05$	1.05$
100 - 249	1.02$	1.02$
250 - 455	0.97$	0.97$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 455

Set of 1

SPD09N05. C(in): 215pF. Cost): 75pF. Channel type: N. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: dv/dt rated Enhancement mode. Id(imp): 37A. ID (T=100°C): 6.5A. ID (T=25°C): 9.2A. Idss (max): 100uA. IDss (min): 0.1uA. Marking on the case: SPD09N05. Pd (Power Dissipation, Max): 24W. On-resistance Rds On: 0.093 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: SIPMOS Power-Transistor. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2.1V. Number of terminals: 2. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 12:25.

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Delivery in 2-3 days, with postal tracking!