Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 34 | 0.78$ | 0.78$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 34 | 0.78$ | 0.78$ |
RG2Y. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 100 ns. Semiconductor material: silicon. Function: Ultra Fast Recovery Rectifier Diode. Forward current (AV): 1.5A. IFSM: 50A. Note: SAMSUNG. MRI (max): 2.5mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Weight: 0.6g. Assembly/installation: PCB through-hole mounting. Housing: DO-15. Housing (according to data sheet): D2A ( 4.0x7.2mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.1V. VRRM: 70V. Spec info: IFMS 50Ap. Quantity in stock updated on 26/12/2024, 03:25.
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