Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.06$ | 4.06$ |
5 - 9 | 3.85$ | 3.85$ |
10 - 24 | 3.65$ | 3.65$ |
25 - 49 | 3.45$ | 3.45$ |
50 - 99 | 3.37$ | 3.37$ |
100 - 249 | 3.28$ | 3.28$ |
250+ | 3.16$ | 3.16$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.06$ | 4.06$ |
5 - 9 | 3.85$ | 3.85$ |
10 - 24 | 3.65$ | 3.65$ |
25 - 49 | 3.45$ | 3.45$ |
50 - 99 | 3.37$ | 3.37$ |
100 - 249 | 3.28$ | 3.28$ |
250+ | 3.16$ | 3.16$ |
PSMN035-150P. C(in): 4720pF. Cost): 456pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 118 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 200A. ID (T=100°C): 36A. ID (T=25°C): 50A. Idss (max): 500uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Operating temperature: -55...+175°C. Voltage Vds(max): 150V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. On-resistance Rds On: 30 milliOhms. Conditioning unit: 50. Spec info: IDM--200A (Tmb 25°C; pulsed). G-S Protection: no. Quantity in stock updated on 28/12/2024, 10:25.
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