PSMN015-100P

Quantity	excl. VAT	VAT incl.
1 - 4	3.39$	3.39$
5 - 9	3.22$	3.22$
10 - 17	3.05$	3.05$

Quantity	U.P
1 - 4	3.39$	3.39$
5 - 9	3.22$	3.22$
10 - 17	3.05$	3.05$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 17

Set of 1

PSMN015-100P. C(in): 4900pF. Cost): 390pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 80 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 240A. ID (T=100°C): 60.8A. ID (T=25°C): 75A. Idss (max): 500uA. IDss (min): 0.05uA. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 95 ns. Td(on): 25 ns. Technology: 'enhancement mode field-effect transistor'. Housing: TO-220. Housing (according to data sheet): TO-220AB ( SOT78 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Spec info: IDM--240A (Tmb 25°C; pulsed). G-S Protection: no. Quantity in stock updated on 28/12/2024, 10:25.

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Delivery in 2-3 days, with postal tracking!