Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.98$ | 0.98$ |
5 - 9 | 0.93$ | 0.93$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.71$ | 0.71$ |
50 - 99 | 0.62$ | 0.62$ |
100 - 249 | 0.60$ | 0.60$ |
250 - 884 | 0.53$ | 0.53$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.98$ | 0.98$ |
5 - 9 | 0.93$ | 0.93$ |
10 - 24 | 0.76$ | 0.76$ |
25 - 49 | 0.71$ | 0.71$ |
50 - 99 | 0.62$ | 0.62$ |
100 - 249 | 0.60$ | 0.60$ |
250 - 884 | 0.53$ | 0.53$ |
P1000M. Cj: 70pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 400A. MRI (min): 10uA. Marking on the case: P1000M. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. VRRM: 1000V. Spec info: IFSM--800Ap t=10mS. Quantity in stock updated on 24/12/2024, 16:25.
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