Electronic components and equipment, for businesses and individuals

P1000M

P1000M
Quantity excl. VAT VAT incl.
1 - 4 0.98$ 0.98$
5 - 9 0.93$ 0.93$
10 - 24 0.79$ 0.79$
25 - 49 0.77$ 0.77$
50 - 99 0.67$ 0.67$
100 - 249 0.65$ 0.65$
250 - 1081 0.58$ 0.58$
Quantity U.P
1 - 4 0.98$ 0.98$
5 - 9 0.93$ 0.93$
10 - 24 0.79$ 0.79$
25 - 49 0.77$ 0.77$
50 - 99 0.67$ 0.67$
100 - 249 0.65$ 0.65$
250 - 1081 0.58$ 0.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1081
Set of 1

P1000M. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1000V. Housing: P600. Average Rectified Current per Diode: 10A. Spec info: IFSM--800Ap t=10mS. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.05V. Forward voltage Vf (min): 0.9V. Diode type: rectifier diode. Diode Configuration: independent. Forward Voltage (Max): <0.9V / 5A. Mounting Type: THT. Reverse Leakage Current: 25uA / 1000V. Reverse Recovery Time (Max): 1500ns. Information: P1000M. Series: P1000. MSL: yes. Original product from manufacturer Diotec, Diotec Semiconductor. Quantity in stock updated on 01/07/2025, 09:25.

Equivalent products :

Quantity in stock : 886
10A10

10A10

Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8....
10A10
Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). VRRM: 1000V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 28.7k Ohms. Equivalents: P1000M, 10A07-TP. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
10A10
Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). VRRM: 1000V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 28.7k Ohms. Equivalents: P1000M, 10A07-TP. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V
Set of 1
0.42$ VAT incl.
(0.42$ excl. VAT)
0.42$

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