10A10

Quantity	excl. VAT	VAT incl.
1 - 9	0.42$	0.42$
10 - 24	0.40$	0.40$
25 - 49	0.39$	0.39$
50 - 99	0.38$	0.38$
100 - 249	0.34$	0.34$
250 - 499	0.33$	0.33$
500 - 908	0.32$	0.32$

Quantity	U.P
1 - 9	0.42$	0.42$
10 - 24	0.40$	0.40$
25 - 49	0.39$	0.39$
50 - 99	0.38$	0.38$
100 - 249	0.34$	0.34$
250 - 499	0.33$	0.33$
500 - 908	0.32$	0.32$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 908

Set of 1

10A10. Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). VRRM: 1000V. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 28.7k Ohms. Equivalents: P1000M, 10A07-TP. Number of terminals: 2. RoHS: yes. Spec info: IFSM--400Ap t=8.3ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. Original product from manufacturer Lge Technology. Quantity in stock updated on 20/05/2025, 18:25.

Equivalent products :

Quantity in stock : 834

P1000M

Forward current (AV): 10A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5m...

Set of 1

0.98$ VAT incl.
(0.98$ excl. VAT)

0.98$