Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.42$ | 0.42$ |
10 - 24 | 0.40$ | 0.40$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 236 | 0.32$ | 0.32$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.42$ | 0.42$ |
10 - 24 | 0.40$ | 0.40$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 236 | 0.32$ | 0.32$ |
10A10. Cj: 120pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. Forward current (AV): 10A. IFSM: 400A. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 28.7k Ohms. Equivalents: P1000M, 10A07-TP. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 8.9x8.8mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--400Ap t=8.3ms. Quantity in stock updated on 24/12/2024, 02:25.
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