P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A - SI2309CDS-T1-GE3
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.31$ | 1.31$ |
| 5 - 9 | 1.24$ | 1.24$ |
| 10 - 24 | 1.20$ | 1.20$ |
| 25 - 49 | 1.17$ | 1.17$ |
| 50 - 99 | 1.15$ | 1.15$ |
| 100 - 249 | 0.69$ | 0.69$ |
| 250 - 6051 | 0.67$ | 0.67$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.31$ | 1.31$ |
| 5 - 9 | 1.24$ | 1.24$ |
| 10 - 24 | 1.20$ | 1.20$ |
| 25 - 49 | 1.17$ | 1.17$ |
| 50 - 99 | 1.15$ | 1.15$ |
| 100 - 249 | 0.69$ | 0.69$ |
| 250 - 6051 | 0.67$ | 0.67$ |
P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A - SI2309CDS-T1-GE3. P-channel transistor, PCB soldering (SMD), SOT-23, MS-012, -60V, -1.2A. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -60V. Drain Current Id [A] @ 25°C: -1.2A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: N9. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.34 Ohms @ -1.25A. Gate breakdown voltage Ugs [V]: -3V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 25 ns. Ciss Gate Capacitance [pF]: 210pF. Maximum dissipation Ptot [W]: 1.7W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Original product from manufacturer Vishay (siliconix). Quantity in stock updated on 04/06/2025, 03:25.
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