P-channel transistor RFD8P05SM, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

P-channel transistor RFD8P05SM, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V

Quantity
Unit price
1-4
1.93$
5-24
1.83$
25-49
1.58$
50-99
1.42$
100+
1.31$
Equivalence available
Quantity in stock: 146

P-channel transistor RFD8P05SM, 8A, 25uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 50V. ID (T=25°C): 8A. Idss (max): 25uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 50V. Assembly/installation: surface-mounted component (SMD). Channel type: P. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 6A. IDss (min): 1uA. Id(imp): 20A. Marking on the case: D8P05. Number of terminals: 2. On-resistance Rds On: 0.3 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 48W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 20A. Td(off): 42 ns. Td(on): 16 ns. Technology: Power MOSFET MegaFET. Trr Diode (Min.): 125us. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: Harris. Quantity in stock updated on 10/31/2025, 09:29

Technical documentation (PDF)
RFD8P05SM
28 parameters
ID (T=25°C)
8A
Idss (max)
25uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 )
Voltage Vds(max)
50V
Assembly/installation
surface-mounted component (SMD)
Channel type
P
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
6A
IDss (min)
1uA
Id(imp)
20A
Marking on the case
D8P05
Number of terminals
2
On-resistance Rds On
0.3 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
48W
Quantity per case
1
RoHS
yes
Spec info
ID pulse 20A
Td(off)
42 ns
Td(on)
16 ns
Technology
Power MOSFET MegaFET
Trr Diode (Min.)
125us
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
Harris

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