P-channel transistor SPD08P06P, 8.8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 60V. ID (T=25°C): 8.8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 335pF. Channel type: P. Cost): 105pF. Drain-source protection: diode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Id(imp): 35A. Number of terminals: 2. On-resistance Rds On: 0.23 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Spec info: ID pulse 35.2A. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Trr Diode (Min.): 60us. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer: Infineon Technologies. Quantity in stock updated on 10/31/2025, 07:33