P-channel transistor, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V - NDS332P

Quantity	excl. VAT	VAT incl.
1 - 9	0.21$	0.21$
10 - 24	0.20$	0.20$
25 - 49	0.19$	0.19$
50 - 99	0.18$	0.18$
100 - 249	0.17$	0.17$
250 - 499	0.16$	0.16$
500 - 2111	0.14$	0.14$

Quantity	U.P
1 - 9	0.21$	0.21$
10 - 24	0.20$	0.20$
25 - 49	0.19$	0.19$
50 - 99	0.18$	0.18$
100 - 249	0.17$	0.17$
250 - 499	0.16$	0.16$
500 - 2111	0.14$	0.14$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2111

Set of 1

P-channel transistor, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V - NDS332P. P-channel transistor, 1A, 10uA, SSOT, SSOT-3 ( SuperSOT-3 ), 20V. ID (T=25°C): 1A. Idss (max): 10uA. Housing: SSOT. Housing (according to data sheet): SSOT-3 ( SuperSOT-3 ). Voltage Vds(max): 20V. C(in): 195pF. Cost): 105pF. Channel type: P. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 10A. IDss (min): 1uA. IGF: 1A. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.35 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 25 ns. Td(on): 8 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) max.: 1V. Vgs(th) min.: 0.4V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/04/2025, 21:25.

Technical documentation