P-channel transistor IRFU9024N, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V

P-channel transistor IRFU9024N, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V

Quantity
Unit price
1-4
0.80$
5-24
0.67$
25-49
0.51$
50+
0.45$
Equivalence available
Quantity in stock: 30

P-channel transistor IRFU9024N, 11A, 250uA, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 55V. Assembly/installation: PCB through-hole mounting. C(in): 350pF. Channel type: P. Cost): 170pF. Drain-source protection: yes. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 8A. IDss (min): 25uA. Id(imp): 44A. Number of terminals: 3. On-resistance Rds On: 0.175 Ohms. Pd (Power Dissipation, Max): 38W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 15 ns. Technology: HEXFET® Power MOSFET. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 07:19

Technical documentation (PDF)
IRFU9024N
29 parameters
ID (T=25°C)
11A
Idss (max)
250uA
Housing
TO-251 ( I-Pak )
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
55V
Assembly/installation
PCB through-hole mounting
C(in)
350pF
Channel type
P
Cost)
170pF
Drain-source protection
yes
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
8A
IDss (min)
25uA
Id(imp)
44A
Number of terminals
3
On-resistance Rds On
0.175 Ohms
Pd (Power Dissipation, Max)
38W
Quantity per case
1
RoHS
yes
Td(off)
23 ns
Td(on)
15 ns
Technology
HEXFET® Power MOSFET
Trr Diode (Min.)
47 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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