P-channel transistor IRFR9024N, D-PAK ( TO-252 ), 11A, 250uA, TO-252AA ( DPAK ) ( SOT428 ), 55V

P-channel transistor IRFR9024N, D-PAK ( TO-252 ), 11A, 250uA, TO-252AA ( DPAK ) ( SOT428 ), 55V

Quantity
Unit price
1-4
0.99$
5-24
0.84$
25-49
0.74$
50-99
0.65$
100+
0.55$
+50 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Equivalence available
Quantity in stock: 211

P-channel transistor IRFR9024N, D-PAK ( TO-252 ), 11A, 250uA, TO-252AA ( DPAK ) ( SOT428 ), 55V. Housing: D-PAK ( TO-252 ). ID (T=25°C): 11A. Idss (max): 250uA. Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. Assembly/installation: surface-mounted component (SMD). C(in): 350pF. Channel type: P. Charge: 12.7nC. Cost): 170pF. Drain current: -11A. Drain-source protection: yes. Drain-source voltage: -55V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 3.3K/W. ID (T=100°C): 8A. IDss (min): 25uA. Id(imp): 44A. Number of terminals: 3. On-resistance Rds On: 0.175 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 38W. Polarity: unipolar. Power: 38W. Quantity per case: 1. RoHS: yes. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFR9024N
37 parameters
Housing
D-PAK ( TO-252 )
ID (T=25°C)
11A
Idss (max)
250uA
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
55V
Assembly/installation
surface-mounted component (SMD)
C(in)
350pF
Channel type
P
Charge
12.7nC
Cost)
170pF
Drain current
-11A
Drain-source protection
yes
Drain-source voltage
-55V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
20V
Gate/source voltage Vgs
20V
Housing thermal resistance
3.3K/W
ID (T=100°C)
8A
IDss (min)
25uA
Id(imp)
44A
Number of terminals
3
On-resistance Rds On
0.175 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
38W
Polarity
unipolar
Power
38W
Quantity per case
1
RoHS
yes
Td(off)
23 ns
Td(on)
13 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
47 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

Equivalent products and/or accessories for IRFR9024N