P-channel transistor IRFU9024, TO-251 ( I-Pak ), 8.8A, 500uA, TO-251AA ( I-PAK ), 60V

P-channel transistor IRFU9024, TO-251 ( I-Pak ), 8.8A, 500uA, TO-251AA ( I-PAK ), 60V

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Unit price
1-4
0.88$
5-24
0.76$
25-49
0.66$
50-99
0.59$
100+
0.48$
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Equivalence available
Quantity in stock: 72

P-channel transistor IRFU9024, TO-251 ( I-Pak ), 8.8A, 500uA, TO-251AA ( I-PAK ), 60V. Housing: TO-251 ( I-Pak ). ID (T=25°C): 8.8A. Idss (max): 500uA. Housing (according to data sheet): TO-251AA ( I-PAK ). Voltage Vds(max): 60V. Assembly/installation: PCB through-hole mounting. C(in): 570pF. Channel type: P. Charge: 19nC. Conditioning: tubus. Cost): 360pF. Drain current: -8.8A, -5.6A. Drain-source protection: zener diode. Drain-source voltage: -60V. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 5.6A. IDss (min): 100uA. Id(imp): 35A. Number of terminals: 3. On-resistance Rds On: 0.28 Ohms. On-state resistance: 0.28 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 42W. Polarity: unipolar. Power: 42W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 07:19

Technical documentation (PDF)
IRFU9024
37 parameters
Housing
TO-251 ( I-Pak )
ID (T=25°C)
8.8A
Idss (max)
500uA
Housing (according to data sheet)
TO-251AA ( I-PAK )
Voltage Vds(max)
60V
Assembly/installation
PCB through-hole mounting
C(in)
570pF
Channel type
P
Charge
19nC
Conditioning
tubus
Cost)
360pF
Drain current
-8.8A, -5.6A
Drain-source protection
zener diode
Drain-source voltage
-60V
G-S Protection
no
Gate-source voltage
±20V
Gate/source voltage Vgs
20V
ID (T=100°C)
5.6A
IDss (min)
100uA
Id(imp)
35A
Number of terminals
3
On-resistance Rds On
0.28 Ohms
On-state resistance
0.28 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
42W
Polarity
unipolar
Power
42W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
13 ns
Technology
HEXFET
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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