P-channel transistor IRFR9024, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V

P-channel transistor IRFR9024, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V

Quantity
Unit price
1-4
0.83$
5-24
0.73$
25-49
0.66$
50-74
0.61$
75+
0.54$
Equivalence available
Quantity in stock: 165

P-channel transistor IRFR9024, 8.8A, 500uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 60V. ID (T=25°C): 8.8A. Idss (max): 500uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 570pF. Channel type: P. Cost): 360pF. Drain-source protection: zener diode. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 5.6A. IDss (min): 100uA. Id(imp): 35A. Number of terminals: 2. On-resistance Rds On: 0.28 Ohms. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 42W. Quantity per case: 1. RoHS: yes. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 100us. Type of transistor: MOSFET. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:37

Technical documentation (PDF)
IRFR9024
28 parameters
ID (T=25°C)
8.8A
Idss (max)
500uA
Housing
D-PAK ( TO-252 )
Housing (according to data sheet)
TO-252AA ( DPAK ) ( SOT428 )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
570pF
Channel type
P
Cost)
360pF
Drain-source protection
zener diode
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
5.6A
IDss (min)
100uA
Id(imp)
35A
Number of terminals
2
On-resistance Rds On
0.28 Ohms
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
42W
Quantity per case
1
RoHS
yes
Td(off)
15 ns
Td(on)
13 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
100us
Type of transistor
MOSFET
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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