P-channel transistor IRF9530, TO-220, 12A, 500uA, TO-220AB, 100V

P-channel transistor IRF9530, TO-220, 12A, 500uA, TO-220AB, 100V

Quantity
Unit price
1-4
1.27$
5-24
1.09$
25-49
0.96$
50-99
0.86$
100+
0.66$
+25 additional pieces available in remote stock (supply within 4 hours). Contact us for pricing and availability!
Equivalence available
Quantity in stock: 103

P-channel transistor IRF9530, TO-220, 12A, 500uA, TO-220AB, 100V. Housing: TO-220. ID (T=25°C): 12A. Idss (max): 500uA. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 860pF. Channel type: P. Charge: 38.7nC. Conditioning: tubus. Cost): 340pF. Drain current: -14A. Drain-source protection: yes. Drain-source voltage: -100V. Function: High-speed switching. G-S Protection: no. Gate-source voltage: 20V, ±20V. Gate/source voltage Vgs: 20V. Housing thermal resistance: 1.9K/W. ID (T=100°C): 8.2A. IDss (min): 100uA. Id(imp): 48A. Number of terminals: 3. On-resistance Rds On: 0.3 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 88W. Polarity: unipolar. Power: 79W. Quantity per case: 1. RoHS: yes. Td(off): 39 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9530
38 parameters
Housing
TO-220
ID (T=25°C)
12A
Idss (max)
500uA
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
860pF
Channel type
P
Charge
38.7nC
Conditioning
tubus
Cost)
340pF
Drain current
-14A
Drain-source protection
yes
Drain-source voltage
-100V
Function
High-speed switching
G-S Protection
no
Gate-source voltage
20V, ±20V
Gate/source voltage Vgs
20V
Housing thermal resistance
1.9K/W
ID (T=100°C)
8.2A
IDss (min)
100uA
Id(imp)
48A
Number of terminals
3
On-resistance Rds On
0.3 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
88W
Polarity
unipolar
Power
79W
Quantity per case
1
RoHS
yes
Td(off)
39 ns
Td(on)
12 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
120ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier

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