P-channel transistor IRF9530N, 14A, 250uA, TO-220, TO-220AB, 100V

P-channel transistor IRF9530N, 14A, 250uA, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.37$
5-24
1.18$
25-49
1.03$
50-99
0.92$
100+
0.76$
Quantity in stock: 45

P-channel transistor IRF9530N, 14A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 14A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 760pF. Channel type: P. Cost): 260pF. Drain-source protection: zener diode. Function: High-speed switching. G-S Protection: no. Gate/source voltage Vgs: 20V. ID (T=100°C): 10A. IDss (min): 25uA. Id(imp): 56A. Number of terminals: 3. On-resistance Rds On: 0.20 Ohms. Operating temperature: -55...+175°C. Pd (Power Dissipation, Max): 79W. Quantity per case: 1. RoHS: yes. Td(off): 45 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Trr Diode (Min.): 130 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: International Rectifier. Quantity in stock updated on 10/31/2025, 09:27

Technical documentation (PDF)
IRF9530N
30 parameters
ID (T=25°C)
14A
Idss (max)
250uA
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
760pF
Channel type
P
Cost)
260pF
Drain-source protection
zener diode
Function
High-speed switching
G-S Protection
no
Gate/source voltage Vgs
20V
ID (T=100°C)
10A
IDss (min)
25uA
Id(imp)
56A
Number of terminals
3
On-resistance Rds On
0.20 Ohms
Operating temperature
-55...+175°C
Pd (Power Dissipation, Max)
79W
Quantity per case
1
RoHS
yes
Td(off)
45 ns
Td(on)
15 ns
Technology
HEXFET Power MOSFET
Trr Diode (Min.)
130 ns
Type of transistor
MOSFET
Vgs(th) max.
4 v
Vgs(th) min.
2V
Original product from manufacturer
International Rectifier