Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 6.14$ | 6.14$ |
2 - 2 | 5.83$ | 5.83$ |
3 - 4 | 5.52$ | 5.52$ |
5 - 9 | 5.22$ | 5.22$ |
10 - 19 | 5.10$ | 5.10$ |
20 - 29 | 4.97$ | 4.97$ |
30+ | 4.79$ | 4.79$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 6.14$ | 6.14$ |
2 - 2 | 5.83$ | 5.83$ |
3 - 4 | 5.52$ | 5.52$ |
5 - 9 | 5.22$ | 5.22$ |
10 - 19 | 5.10$ | 5.10$ |
20 - 29 | 4.97$ | 4.97$ |
30+ | 4.79$ | 4.79$ |
P-channel transistor, 12A, 12A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V - 2SJ598. P-channel transistor, 12A, 12A, TO-251 ( I-Pak ), TO-251 ( I-Pak ), 60V. ID (T=25°C): 12A. Idss (max): 12A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251 ( I-Pak ). Voltage Vds(max): 60V. C(in): 720pF. Cost): 150pF. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Function: integrated protection diode. Id(imp): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 23W. On-resistance Rds On: 0.13 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 7 ns. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Technology: P-channel MOS Field Effect Transistor. G-S Protection: yes. Quantity in stock updated on 13/04/2025, 10:25.
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