NTE219

Quantity	excl. VAT	VAT incl.
1 - 1	8.53$	8.53$
2 - 2	8.11$	8.11$
3 - 4	7.68$	7.68$
5 - 9	7.25$	7.25$
10 - 15	7.08$	7.08$

Quantity	U.P
1 - 1	8.53$	8.53$
2 - 2	8.11$	8.11$
3 - 4	7.68$	7.68$
5 - 9	7.25$	7.25$
10 - 15	7.08$	7.08$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 15

Set of 1

NTE219. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 12/03/2025, 02:25.

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!