NTE130
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 5.70$ | 5.70$ |
| 2 - 2 | 5.41$ | 5.41$ |
| 3 - 4 | 5.13$ | 5.13$ |
| 5 - 9 | 4.84$ | 4.84$ |
| 10 - 19 | 4.73$ | 4.73$ |
| 20 - 29 | 4.62$ | 4.62$ |
| 30 - 30 | 4.22$ | 4.22$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 5.70$ | 5.70$ |
| 2 - 2 | 5.41$ | 5.41$ |
| 3 - 4 | 5.13$ | 5.13$ |
| 5 - 9 | 4.84$ | 4.84$ |
| 10 - 19 | 4.73$ | 4.73$ |
| 20 - 29 | 4.62$ | 4.62$ |
| 30 - 30 | 4.22$ | 4.22$ |
Delivery in 2-3 days, with postal tracking!
NTE130. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Collector current: 15A. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 12/03/2025, 02:25.
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