NPN transistor TIP35C, TO-247, 100V, 25A, 25A, TO-247, 100V

NPN transistor TIP35C, TO-247, 100V, 25A, 25A, TO-247, 100V

Quantity
Unit price
1-4
2.26$
5-29
1.99$
30-59
1.81$
60-89
1.67$
90+
1.49$
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Equivalence available
Quantity in stock: 101

NPN transistor TIP35C, TO-247, 100V, 25A, 25A, TO-247, 100V. Housing: TO-247. Collector-Emitter Voltage VCEO: 100V. Collector current Ic [A], max.: 25A. Collector current: 25A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. CE diode: no. Collector current Ic [A]: 25A. Collector-emitter voltage Uceo [V]: 100V. Component family: NPN power transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cost): 35pF. Cutoff frequency ft [MHz]: -. FT: 3 MHz. Function: Complementary power transistors. Housing (JEDEC standard): -. Ic(pulse): 50A. Manufacturer's marking: TIP33C. Max frequency: 3MHz. Max hFE gain: 50. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 125W. Minimum hFE gain: 25. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. Polarity: bipolar. Power: 125W. Production date: 1450. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 1.8V. Semiconductor material: silicon. Spec info: complementary transistor (pair) TIP36C. Type of transistor: NPN. Vcbo: 100V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/06/2025, 22:14

Technical documentation (PDF)
TIP35C
38 parameters
Housing
TO-247
Collector-Emitter Voltage VCEO
100V
Collector current Ic [A], max.
25A
Collector current
25A
Housing (according to data sheet)
TO-247
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
CE diode
no
Collector current Ic [A]
25A
Collector-emitter voltage Uceo [V]
100V
Component family
NPN power transistor
Conditioning
tubus
Configuration
PCB through-hole mounting
Cost)
35pF
FT
3 MHz
Function
Complementary power transistors
Ic(pulse)
50A
Manufacturer's marking
TIP33C
Max frequency
3MHz
Max hFE gain
50
Max temperature
+150°C.
Maximum dissipation Ptot [W]
125W
Minimum hFE gain
25
Number of terminals
3
Pd (Power Dissipation, Max)
125W
Polarity
bipolar
Power
125W
Production date
1450
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
1.8V
Semiconductor material
silicon
Spec info
complementary transistor (pair) TIP36C
Type of transistor
NPN
Vcbo
100V
Voltage (collector - emitter)
100V
Original product from manufacturer
Stmicroelectronics

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