NPN-Transistor TIP147T, 10A, TO-220, TO-220, 100V

NPN-Transistor TIP147T, 10A, TO-220, TO-220, 100V

Quantity
Unit price
1-4
2.30$
5-24
2.03$
25-49
1.84$
50-99
1.70$
100+
1.50$
Quantity in stock: 542

NPN-Transistor TIP147T, 10A, TO-220, TO-220, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. Assembly/installation: PCB through-hole mounting. BE diode: no. BE resistor: R1 typ=8k Ohms, R2 typ=100 Ohms. CE diode: yes. Darlington transistor?: yes. Function: Complementary power Darlington transistor. Ic(pulse): 20A. Max hFE gain: 1000. Minimum hFE gain: 500. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 90W. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) TIP142T. Technology: Monolithic Darlington. Temperature: +150°C. Type of transistor: PNP. Vcbo: 100V. Vebo: 5V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:51

Technical documentation (PDF)
TIP147T
25 parameters
Collector current
10A
Housing
TO-220
Housing (according to data sheet)
TO-220
Collector/emitter voltage Vceo
100V
Assembly/installation
PCB through-hole mounting
BE diode
no
BE resistor
R1 typ=8k Ohms, R2 typ=100 Ohms
CE diode
yes
Darlington transistor?
yes
Function
Complementary power Darlington transistor
Ic(pulse)
20A
Max hFE gain
1000
Minimum hFE gain
500
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
90W
Saturation voltage VCE(sat)
2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) TIP142T
Technology
Monolithic Darlington
Temperature
+150°C
Type of transistor
PNP
Vcbo
100V
Vebo
5V
Original product from manufacturer
Stmicroelectronics