NPN-Transistor TIP137, TO-220, TO-220AB, 100V, 8A, 8A, TO220, 100V

NPN-Transistor TIP137, TO-220, TO-220AB, 100V, 8A, 8A, TO220, 100V

Quantity
Unit price
1-4
0.94$
5-24
0.79$
25-49
0.69$
50-99
0.62$
100+
0.53$
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Quantity in stock: 50

NPN-Transistor TIP137, TO-220, TO-220AB, 100V, 8A, 8A, TO220, 100V. Housing: TO-220. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 8A. Collector current: 8A. Housing (according to data sheet): TO220. Collector/emitter voltage Vceo: 100V. Assembly/installation: THT. BE diode: no. CE diode: no. Collector current Ic [A]: 8A. Component family: Darlington PNP Power Transistor. Conditioning: tubus. Configuration: PCB through-hole mounting. Cost): 70pF. Cutoff frequency ft [MHz]: -. Darlington transistor?: yes. Function: -. Ic(pulse): 12V. Manufacturer's marking: TIP137. Max hFE gain: 15000. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 70W. Maximum saturation voltage VCE(sat): 4 v. Minimum hFE gain: 1000. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. Polarity: bipolar. Power: 70W. Quantity per case: 1. RoHS: no. Saturation voltage VCE(sat): 2V. Semiconductor material: silicon. Spec info: complementary transistor (pair) TIP132. Temperature: +150°C. Type of transistor: PNP. Vcbo: 100V. Vebo: 5V. Voltage (collector - emitter): 100V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 10/31/2025, 09:51

Technical documentation (PDF)
TIP137
38 parameters
Housing
TO-220
Housing (JEDEC standard)
TO-220AB
Collector-emitter voltage Uceo [V]
100V
Collector current Ic [A], max.
8A
Collector current
8A
Housing (according to data sheet)
TO220
Collector/emitter voltage Vceo
100V
Assembly/installation
THT
BE diode
no
CE diode
no
Collector current Ic [A]
8A
Component family
Darlington PNP Power Transistor
Conditioning
tubus
Configuration
PCB through-hole mounting
Cost)
70pF
Darlington transistor?
yes
Ic(pulse)
12V
Manufacturer's marking
TIP137
Max hFE gain
15000
Max temperature
+150°C.
Maximum dissipation Ptot [W]
70W
Maximum saturation voltage VCE(sat)
4 v
Minimum hFE gain
1000
Number of terminals
3
Pd (Power Dissipation, Max)
70W
Polarity
bipolar
Power
70W
Quantity per case
1
RoHS
no
Saturation voltage VCE(sat)
2V
Semiconductor material
silicon
Spec info
complementary transistor (pair) TIP132
Temperature
+150°C
Type of transistor
PNP
Vcbo
100V
Vebo
5V
Voltage (collector - emitter)
100V
Original product from manufacturer
Stmicroelectronics