NPN transistor STN851, 5A, SOT-223 ( TO-226 ), SOT-223, 60V

NPN transistor STN851, 5A, SOT-223 ( TO-226 ), SOT-223, 60V

Quantity
Unit price
1-4
0.56$
5-49
0.45$
50-99
0.39$
100-499
0.36$
500+
0.30$
Quantity in stock: 967

NPN transistor STN851, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Conditioning unit: 1000. Conditioning: roll. Cost): 215pF. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Ic(pulse): 10A. Max hFE gain: 350. Minimum hFE gain: 30. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 1.6W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.32V. Semiconductor material: silicon. Type of transistor: NPN. Vcbo: 150V. Vebo: 7V. Original product from manufacturer: Stmicroelectronics. Quantity in stock updated on 11/08/2025, 21:30

STN851
26 parameters
Collector current
5A
Housing
SOT-223 ( TO-226 )
Housing (according to data sheet)
SOT-223
Collector/emitter voltage Vceo
60V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
CE diode
no
Conditioning unit
1000
Conditioning
roll
Cost)
215pF
FT
130 MHz
Function
Low voltage fast-switching NPN power transistor
Ic(pulse)
10A
Max hFE gain
350
Minimum hFE gain
30
Number of terminals
3
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
1.6W
Quantity per case
1
RoHS
yes
Saturation voltage VCE(sat)
0.32V
Semiconductor material
silicon
Type of transistor
NPN
Vcbo
150V
Vebo
7V
Original product from manufacturer
Stmicroelectronics