NPN-Transistor PMBT4403, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. Assembly/installation: surface-mounted component (SMD). BE diode: no. CE diode: no. Conditioning unit: 3000. Conditioning: roll. Cost): 29pF. FT: 200 MHz. Function: High Speed ​​Switching. Ic(pulse): 800mA. Marking on the case: *T2, P2T, T2T, W2T. Max hFE gain: 300. Minimum hFE gain: 100. Number of terminals: 3. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. RoHS: yes. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: screen printing/SMD code P2T, T2T, W2T, complementary transistor (pair) PMBT4401. Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: PNP. Vcbo: 40V. Vebo: 5V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 02:22