NPN transistor PMBT4401, 0.6A, SOT-23 ( TO-236 ), SOT-23, 40V

NPN transistor PMBT4401, 0.6A, SOT-23 ( TO-236 ), SOT-23, 40V

Quantity
Unit price
10-24
0.0765$
25-49
0.0689$
50-99
0.0650$
100+
0.0505$
Quantity in stock: 51
Minimum: 10

NPN transistor PMBT4401, 0.6A, SOT-23 ( TO-236 ), SOT-23, 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 40V. Assembly/installation: surface-mounted component (SMD). BE diode: no. C(in): 30pF. CE diode: no. Cost): 8pF. FT: 250 MHz. Function: High Speed ​​Switching. Ic(pulse): 0.8A. Marking on the case: p2X, t2X, W2X. Max hFE gain: 300. Maximum saturation voltage VCE(sat): 0.75V. Minimum hFE gain: 100. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Quantity per case: 1. Saturation voltage VCE(sat): 0.4V. Semiconductor material: silicon. Spec info: screen printing/SMD code P2X, T2X, W2X, complementary transistor (pair) PMBT4401. Type of transistor: NPN. Vcbo: 60V. Vebo: 6V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 11/13/2025, 02:22

Technical documentation (PDF)
PMBT4401
27 parameters
Collector current
0.6A
Housing
SOT-23 ( TO-236 )
Housing (according to data sheet)
SOT-23
Collector/emitter voltage Vceo
40V
Assembly/installation
surface-mounted component (SMD)
BE diode
no
C(in)
30pF
CE diode
no
Cost)
8pF
FT
250 MHz
Function
High Speed ​​Switching
Ic(pulse)
0.8A
Marking on the case
p2X, t2X, W2X
Max hFE gain
300
Maximum saturation voltage VCE(sat)
0.75V
Minimum hFE gain
100
Operating temperature
-65...+150°C
Pd (Power Dissipation, Max)
0.25W
Quantity per case
1
Saturation voltage VCE(sat)
0.4V
Semiconductor material
silicon
Spec info
screen printing/SMD code P2X, T2X, W2X, complementary transistor (pair) PMBT4401
Type of transistor
NPN
Vcbo
60V
Vebo
6V
Original product from manufacturer
Nxp Semiconductors
Minimum quantity
10